Herunterladen: GaAs-IR-Lumineszenzdiode LD 271, LD 271 H GaAs Infrared Emitter LD 271 L, LD 271 HL

GaAs-IR-Lumineszenzdiode LD 271, LD 271 H GaAs Infrared Emitter LD 271 L, LD 271 HL Area not flat 9.0 0.6 8.2 0.4 7.8 5.9 7.5 5.5 1.8 4.8 0.6 1.2 4.2 0.4 14.0 11.4 13.0 11.0 Cathode Chip position GEX06239 Approx. weight 0.5 g Cathode 29 9.0 27 8.2 1.8 7.8 5.9 1.2 7.5 5.5 4.8 0.6 4.2 0.4 Area not flat GEO06645 Chip position Approx. weight 0.2 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features λ GaAs-IR-LED, hergestellt im λ GaAs infrared emitting diode, fabricated in a Schmelzepitaxieverfahren liquid phase epitaxy process λ Hohe...
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GaAs-IR-Lumineszenzdiode LD 271, LD 271 H GaAs Infrared Emitter LD 271 L, LD 271 HL

Area not flat 9.0 0.6 8.2 0.4 7.8 5.9 7.5 5.5 1.8 4.8 0.6 1.2 4.2 0.4 14.0 11.4 13.0 11.0 Cathode Chip position GEX06239 Approx. weight 0.5 g Cathode 29 9.0 27 8.2 1.8 7.8 5.9 1.2 7.5 5.5 4.8 0.6 4.2 0.4 Area not flat GEO06645 Chip position Approx. weight 0.2 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features λ GaAs-IR-LED, hergestellt im λ GaAs infrared emitting diode, fabricated in a Schmelzepitaxieverfahren liquid phase epitaxy process λ Hohe Zuverlässigkeit λ High reliability λ Hohe Impulsbelastbarkeit λ High pulse handling capability λ Lange Anschlüsse λ long leads λ Gruppiert lieferbar λ Available in groups λ Gehäusegleich mit SFH 300, SFH 203 λ Same package as SFH 300, SFH 203 Anwendungen Applications λ IR-Fernsteuerung von Fernseh- und λ IR remote control of hi-fi and TV-sets, video Rundfunkgeräten, Videorecordern, tape recorders, dimmers Lichtdimmern λ Remote control of various equipment λ Gerätefernsteuerungen λ Photointerrupters λ Lichtschranken für Gleich- und Wechsellichtbetrieb Semiconductor Group 1 1997-11-01 spacing 2.54 mm 2.54mm spacing 0.4 0.6 1.3 0.4 0.7 0.8 ø5.1 ø4.8 ø4.8 ø5.1 fex06628, Typ Bestellnummer Gehäuse Type Ordering Code Package LD 271 Q62703-Q148 5-mm-LED-Gehäuse (T 1 3/4), graugetöntes Epoxy- LD 271 L Q62703-Q833 Gießharz, Lötspieße im 2.54-mm-Raster ( 1/10’’) 5 mm LED package (T 1 3/4), grey colored epoxy resinLD271 H Q62703-Q256 lens, solder tabs lead spacing 2.54 mm (1/10’’) LD271 HL Q62703-Q838 Grenzwerte Maximum Ratings Betriebs- und Lagertemperatur Top; Tstg – 55 ... + 100 °C Operating and storage temperature range Sperrschichttemperatur Tj 100 °C Junction temperature Sperrspannung VR5VReverse voltage Durchlaßstrom IF 130 mA Forward current Stoßstrom, tp = 10 µs, D = 0 IFSM 3.5 A Surge current Verlustleistung Ptot 220 mW Power dissipation Wärmewiderstand RthJA 330 K/W Thermal resistance Semiconductor Group 2 1997-11-01, Kennwerte (TA = 25 °C) Characteristics Wellenlänge der Strahlung λpeak 950 nm Wavelength at peak emission IF = 100 mA, tp = 20 ms Spektrale Bandbreite bei 50 % von Imax ∆λ 55 nm Spectral bandwidth at 50 % of Imax IF = 100 mA Abstrahlwinkel ϕ ± 25 Grad Half angle deg. Aktive Chipfläche A 0.25 mm2 Active chip area Abmessungen der aktive Chipfläche L × B 0.5 × 0.5 mm Dimensions of the active chip area L × W Abstand Chipoberfläche bis Linsenscheitel H 4.0 ... 4.6 mm Distance chip front to lens top Schaltzeiten, Ie von 10 % auf 90 % und von tr, tf 1 µs 90 % auf 10 %, bei IF = 100 mA, RL = 50 Ω Switching times, Ie from 10 % to 90 % and from 90 % to 10 %, IF = 100 mA, RL = 50 Ω Kapazität, VR = 0 V, f = 1 MHz Co 40 pF Capacitance Durchlaßspannung Forward voltage IF = 100 mA, tp = 20 ms VF 1.30 (≤ 1.5) V IF = 1 A, tp = 100 µs VF 1.90 (≤ 2.5) V Sperrstrom, VR = 5 V IR 0.01 (≤ 1) µA Reverse current Gesamtstrahlungsfluß Φe 18 mW Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. Φe, TCI – 0.55 %/K Temperature coefficient of Ie or Φe, Temperaturkoeffizient von VF, IF = 100 mA TCV – 1.5 mV/K Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von λ, IF = 100 mA TCλ 0.3 nm/K Temperature coefficient of λ, IF = 100 mA Semiconductor Group 3 1997-11-01,

Gruppierung der Strahlstärke Ie in Achsrichtung

gemessen bei einem Raumwinkel Ω = 0.01 sr

Grouping of radiant intensity Ie in axial direction

at a solid angle of Ω = 0.01 sr

LD 271 LD 271 H LD 271 L LD 271 HL Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Ie 15 (≥ 10) > 16 mW/sr IF = 1 A, tp = 100 µs Ie typ. 120 mW/sr I

Relative spectral emission Radiant intensity e = f (IF) Max. permissible forward currentIe 100 mAIrel = f (λ) IF = f (TA) Single pulse, tp = 20 µs 100 OHRD1938 10 2 OHR01038 OHO00364Ι 200e % Ιe (100 mA) Ι F mA Ι rel 80 160 10 1 60 120 40 80 10 0 20 40 10 -10 0 880 920 960 1000 nm 1060 10 -2 10 -1 100A101020 40 60 80 C 100λΙFTA

Semiconductor Group 4 1997-11-01

, Forward current Permissible pulse handling capability IF = f (VF), single pulse, tp = 20 µs IF = f (τ), TC = 25 °C, duty cycle D = parameter 1 OHR01041 10 4 OHR0025710ΙAmAtΙpFFtp5D=

ΙF T T

typ. max. 10 0 0.05 D =0.005 0.1 0.01 3 0.0210 0.2 10 -1 5 0.5

DC

10 -2 10211.5 2 2.5 3 3.54V4.5 10 -5 10 -4 10 -3 10 -2 10 -1 100s10 2 VFtPRadiation characteristics Irel = f (ϕ) 40 30 20 10 0 OHR01879 ϕ 1.0 0.8 60 0.6 70 0.4 0.2 90 0 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120

Semiconductor Group 5 1997-11-01

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