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GaAs-IR-Lumineszenzdiode LD 274 GaAs Infrared Emitter Area not flat 9.0 0.6 8.2 0.4 7.8 5.9 7.5 5.5 1.8 5.7 0.6 1.2 5.1 0.4 27 Chip position Cathode (Diode) GEX06260 Collector (Transistor) Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features λ Sehr enger Abstrahlwinkel λ Extremely narrow half angle λ GaAs-IR-LED, hergestellt im λ GaAs infrared emitting diode, fabricated in a Schmelzepitaxieverfahren liquid phase epitaxy process λ Hohe Zuverlässigkeit λ High reliability λ Hohe Impulsbelastbarkeit λ High pulse ha...
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GaAs-IR-Lumineszenzdiode LD 274 GaAs Infrared Emitter

Area not flat 9.0 0.6 8.2 0.4 7.8 5.9 7.5 5.5 1.8 5.7 0.6 1.2 5.1 0.4 27 Chip position Cathode (Diode) GEX06260 Collector (Transistor) Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features λ Sehr enger Abstrahlwinkel λ Extremely narrow half angle λ GaAs-IR-LED, hergestellt im λ GaAs infrared emitting diode, fabricated in a Schmelzepitaxieverfahren liquid phase epitaxy process λ Hohe Zuverlässigkeit λ High reliability λ Hohe Impulsbelastbarkeit λ High pulse handling capability λ Gruppiert lieferbar λ Available in groups λ Gehäusegleich mit SFH 484 λ Same package as SFH 484 Anwendungen Applications λ IR-Fernsteuerung von Fernseh- und λ IR remote control of hi-fi and TV-sets, video Rundfunkgeräten, Videorecordern, tape recorders, dimmers, Lichtdimmern, Geräten of various equipment Typ Bestellnummer Gehäuse Type Ordering Code Package LD 274 Q62703-Q1031 5-mm-LED-Gehäuse (T 1 3/4), graugetöntes Epoxy- Gießharz, Anschlüsse im 2.54-mm-Raster (1/10’’), LD 274-21) Q62703-Q1819 Kathodenkennzeichnung: Kürzerer Lötspieß, flat 5 mm LED package (T 1 3/4), grey colored epoxy resin lens, solder tabs lead spacing 2.54 mm (1/ ’’), cathode LD 274-3 Q62703-Q1820 10 marking: shorter solder lead, flat Semiconductor Group 1 1997-11-01 2.54 mm spacing 0.8 0.4 ø5.1 ø4.8 fex06260, Grenzwerte (TA = 25 °C) Maximum Ratings Betriebs- und Lagertemperatur Top; Tstg – 55 ... + 100 °C Operating and storage temperature range Sperrschichttemperatur Tj 100 °C Junction temperature Sperrspannung VR5VReverse voltage Durchlaßstrom IF 100 mA Forward current Stoßstrom, tp = 10 µs, D = 0 IFSM3ASurge current Verlustleistung Ptot 165 mW Power dissipation Wärmewiderstand RthJA 450 K/W Thermal resistance Kennwerte (TA = 25 °C) Characteristics Bezeichnung Symbol Wert Einheit Wellenlänge der Strahlung λpeak 950 nm Wavelength at peak emission IF = 100 mA, tp = 20 ms Spektrale Bandbreite bei 50 % von Imax ∆λ 55 nm Spectral bandwidth at 50 % of Imax IF = 100 m A, tp = 20 ms Abstrahlwinkel Half angle ϕ ± 10 Grad Aktive Chipfläche A 0.09 mm2 Active chip area Abmessungen der aktive Chipfläche L × B 0.3 × 0.3 mm Dimension of the active chip area L × W Abstand Chipoberfläche bis Linsenscheitel Distance chip front to lens top H 4.9 ... 5.5 mm Schaltzeiten, Ie von 10 % auf 90 % und von tr, tf 1 µs 90 % auf 10 %, bei IF = 100 mA, RL = 50 Ω Switching times, Ie from 10 % to 90 % and from 90 % to 10 %, IF = 100 mA, RL = 50 Ω Semiconductor Group 2 1997-11-01, Kennwerte (TA = 25 °C) Characteristics Kapazität Co 25 pF Capacitance VR = 0 V, f = 1 MHz Durchlaßspannung Forward voltage IF = 100 mA, tp = 20 ms VF 1.30 (≤ 1.5) V IF = 1 A, tp = 100 µs VF 1.90 (≤ 2.5) V Sperrstrom, VR = 5 V IR 0.01 (≤ 1) µA Reverse current Gesamtstrahlungsfluß Φe 15 mW Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. Φe, TCI – 0.55 %/K Temperature coefficient of Ie or Φe, Temperaturkoeffizient von VF, IF = 100 mA TCV – 1.5 mV/K Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von λ, IF = 100 mA TCλ + 0.3 nm/K Temperature coefficient of λ, IF = 100 mA Gruppierung der Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel Ω = 0.001 sr Grouping of radiant intensity Ie in axial direction at a solid angle of Ω = 0.001 sr Bezeichnung Symbol Wert Einheit LD 274 LD 274-21) LD 274-3 Strahlstärke Ie min 50 50 80 mW/sr Radiant intensity Ie max – 100 – mW/sr IF = 100 mA, tp = 20 ms Strahlstärke Radiant intensity IF = 1 A, tp = 100 µs Ie typ. 350 600 800 mW/sr Semiconductor Group 3 1997-11-01,

I Relative spectral emission Radiant intensity e = f (IF) Max. permissible forward currentI 100 mA Irel = f (λ) et µ IF = f (T )Single pulse, p = 20 s A

OHR00883 100 OHR01938 OHR01038Ι 10 2 120eΙΙmA% e (100 mA) F Ι rel 100 10 1 80 60 RthjA = 450 K/W 10 0 40 0 10 -1 880 920 960 1000 nm 1060 10 -2 10 -1 100A101020 40 60 80 100 °C 120λΙTF A

Forward current Radiation characteristics, Irel = f (ϕ) IF = f (VF), single pulse, tp = 20 µs

1 OHR01041 40 30 20 10 0 OHR0188210Aϕ1.0Ι F 0.8 typ. max. 10 0 60 0.6 70 0.4 10 -1 0.2 90 0 10 -2 100 1 1.5 2 2.5 3 3.54V4.5 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120

VF Permissible pulse handling capability IF = f (τ), TC ≤ 25 °C,

duty cycle D = parameter 10 4 OHR00860 Ι mA t pFt5pD= Ι F

T

D = 0.005 T 0.01 0.02 10 3 0.1 0.05 0.2 0.5 10 2

DC

10 -5 10 -4 10 -3 10 -2 10 -1 10 0 101s102tp

Semiconductor Group 4 1997-11-01

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